Electronic structure of a narrow-gap semiconductor KAg 3 Te 2
Rong 荣 Feng 冯; Haotian 昊天 Zheng 郑; Haoran 浩然 Liu 刘; Binru 彬茹 Zhao 赵; Xunqing 训庆 Yin 尹; Zhihua 智华 Liu 刘; Feng 峰 Liu 刘; Guohua 国华 Wang 王; Xiaofeng 晓峰 Xu 许; Wentao 文涛 Zhang 张; Weidong 卫东 Luo 罗; Wei 苇 Zhou 周; Dong 冬 Qian 钱
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Chinese Physics B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1674-1056/adb680
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Rong 荣 Feng 冯; Haotian 昊天 Zheng 郑; Haoran 浩然 Liu 刘; Binru 彬茹 Zhao 赵; Xunqing 训庆 Yin 尹; Zhihua 智华 Liu 刘; Feng 峰 Liu 刘; Guohua 国华 Wang 王; Xiaofeng 晓峰 Xu 许; Wentao 文涛 Zhang 张; Weidong 卫东 Luo 罗; Wei 苇 Zhou 周; Dong 冬 Qian 钱. Electronic structure of a narrow-gap semiconductor KAg 3 Te 2. Chinese Physics B. 2025-04-01. https://doi.org/10.1088/1674-1056/adb680