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Research literature / Journal article

ELECTROPHYSICAL PROPERTIES OF SEMICONDUCTOR STRUCTURE WITH POROUS SILICON FILM IRRADIATED WITH NANOSECOND YTTERBIUM LASER

Published
Publisher
Ryazan State Radio Engineering University RSREU
Journal / collection
Vestnik of Ryazan State Radio Engineering University
Research area
Semiconductors
Source type
Journal article
DOI
10.21667/1995-4565-2025-91-256-266

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Ryazan State Radio Engineering University RSREU. ELECTROPHYSICAL PROPERTIES OF SEMICONDUCTOR STRUCTURE WITH POROUS SILICON FILM IRRADIATED WITH NANOSECOND YTTERBIUM LASER. Vestnik of Ryazan State Radio Engineering University. 2025. https://doi.org/10.21667/1995-4565-2025-91-256-266

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