Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope

Jiayang Hu; Hanxi Li; Anzhe Chen; Yishu Zhang; Hailiang Wang; Yu Fu; Xin Zhou; Kian Ping Loh; Yu Kang; Jian Chai; Chenhao Wang; Jiachao Zhou; Jialei Miao; Yuda Zhao; Shuai Zhong; Rong Zhao; Kaihui Liu; Yang Xu; Bin Yu

Published
Publisher
American Chemical Society (ACS)
Journal / collection
ACS Nano
Research area
Semiconductors
Source type
Journal article
DOI
10.1021/acsnano.4c03856

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Jiayang Hu; Hanxi Li; Anzhe Chen; Yishu Zhang; Hailiang Wang; Yu Fu; Xin Zhou; Kian Ping Loh; Yu Kang; Jian Chai; Chenhao Wang; Jiachao Zhou; Jialei Miao; Yuda Zhao; Shuai Zhong; Rong Zhao; Kaihui Liu; Yang Xu; Bin Yu. All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope. ACS Nano. 2024-07-29. https://doi.org/10.1021/acsnano.4c03856

Download RIS