Electrostatic Analysis and Performance Optimization of Si Doped HfO2 Ferroelectric Material Based Negative Capacitance Field Effect Transistor (NCFET)
Md. Ibrahim Ahmed; Kamrul Hasan; Mohammad Junaebur Rashid; Mohammed Shahriar Sabuktagin
- Published
- Publisher
- Pleiades Publishing Ltd
- Journal / collection
- Semiconductors
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1134/s1063782624602693
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Cite this source
Md. Ibrahim Ahmed; Kamrul Hasan; Mohammad Junaebur Rashid; Mohammed Shahriar Sabuktagin. Electrostatic Analysis and Performance Optimization of Si Doped HfO2 Ferroelectric Material Based Negative Capacitance Field Effect Transistor (NCFET). Semiconductors. 2025-04. https://doi.org/10.1134/s1063782624602693