Evaluation of the Impacts of V th Variation and Leakage Current on the Signal-to-Noise Ratio of a Single-Shot HDR Image Sensor with a Lateral Overflow Transistor
Takaaki E. Murakami; Yasuyuki Shimoi; Tsutomu Kobayashi; Yoshihiro Sato
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/imfedk64776.2024.10814182
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Cite this source
Takaaki E. Murakami; Yasuyuki Shimoi; Tsutomu Kobayashi; Yoshihiro Sato. Evaluation of the Impacts of V th Variation and Leakage Current on the Signal-to-Noise Ratio of a Single-Shot HDR Image Sensor with a Lateral Overflow Transistor. 2024 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2024-11-21. https://doi.org/10.1109/imfedk64776.2024.10814182