Skip to content
OPEN VARIABLE

Evidence-First Signal Intelligence

Menu

Research literature / Journal article

Monolithic Bidirectional GaN-on-GaN Vertical Transistor Technologies: Exploring Bidirectional CAVET for Next-Generation Switching Applications with Symmetrical Power Control

Xinyi Wen; Hayao Kasai; Maliha Noshin; Chuanzhe Meng; Srabanti Chowdhury

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Electron Devices Magazine
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/med.2024.3451353

Read the original source ↗

The original publisher provides the full text and its access options.

Cite this source

Xinyi Wen; Hayao Kasai; Maliha Noshin; Chuanzhe Meng; Srabanti Chowdhury. Monolithic Bidirectional GaN-on-GaN Vertical Transistor Technologies: Exploring Bidirectional CAVET for Next-Generation Switching Applications with Symmetrical Power Control. IEEE Electron Devices Magazine. 2024-12. https://doi.org/10.1109/med.2024.3451353

Download RIS