High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling
Xingyu Huang; Kaito Hikake; Sung-Hun Kim; Kota Sakai; Zhuo Li; Tomoko Mizutani; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Masaharu Kobayashi
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3473888
The original publisher provides the full text and its access options.
Cite this source
Xingyu Huang; Kaito Hikake; Sung-Hun Kim; Kota Sakai; Zhuo Li; Tomoko Mizutani; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka; Masaharu Kobayashi. High-Field Transport and Statistical Variability of Nanosheet Oxide Semiconductor FETs With Channel Length Scaling. IEEE Transactions on Electron Devices. 2024-12. https://doi.org/10.1109/ted.2024.3473888