Electrical performance of insulated gated bipolar transistor (IGBT) addressed by promising mechanism
Hsin-Chia Yang; Sung-Ching Chi; Pei-Jun Yang; Bo-Hao Huang; Jin-An Kuo; Pei-Chi Wu; Yi-Sheng Peng; Zhen-Yu Cai
- Published
- Publisher
- Institution of Engineering and Technology (IET)
- Journal / collection
- IET Conference Proceedings
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1049/icp.2024.0286
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Cite this source
Hsin-Chia Yang; Sung-Ching Chi; Pei-Jun Yang; Bo-Hao Huang; Jin-An Kuo; Pei-Chi Wu; Yi-Sheng Peng; Zhen-Yu Cai. Electrical performance of insulated gated bipolar transistor (IGBT) addressed by promising mechanism. IET Conference Proceedings. 2024-02-15. https://doi.org/10.1049/icp.2024.0286