Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack
Tetsuo Narita; Kenji Ito; Kazuyoshi Tomita; Hiroko Iguchi; Shiro Iwasaki; Masahiro Horita; Emi Kano; Nobuyuki Ikarashi; Daigo Kikuta
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (RRL) – Rapid Research Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssr.202400141
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Cite this source
Tetsuo Narita; Kenji Ito; Kazuyoshi Tomita; Hiroko Iguchi; Shiro Iwasaki; Masahiro Horita; Emi Kano; Nobuyuki Ikarashi; Daigo Kikuta. Transport Properties in GaN Metal–Oxide–Semiconductor Field‐Effect Transistor Almost Free of Interface Traps with AlSiO/AlN/p‐Type GaN Gate Stack. physica status solidi (RRL) – Rapid Research Letters. 2024-07-09. https://doi.org/10.1002/pssr.202400141