Design and Optimization of a Heterojunction (Ge/Si) Vertical-Tunnel Field Effect Transistor (HV-TFET) with a Doped Bar for Low-Power Applications
Pradeep Kumar Kumawat; Shilpi Birla; Neha Singh
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Journal of Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1007/s11664-024-11130-9
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Cite this source
Pradeep Kumar Kumawat; Shilpi Birla; Neha Singh. Design and Optimization of a Heterojunction (Ge/Si) Vertical-Tunnel Field Effect Transistor (HV-TFET) with a Doped Bar for Low-Power Applications. Journal of Electronic Materials. 2024-05-24. https://doi.org/10.1007/s11664-024-11130-9