New temperature-independent aging indicator for power semiconductor devices – Application to IGBTs
Zoubir Khatir; Ali Ibrahim; Richard Lallemand
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Microelectronics Reliability
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.microrel.2024.115565
The original publisher provides the full text and its access options.
Cite this source
Zoubir Khatir; Ali Ibrahim; Richard Lallemand. New temperature-independent aging indicator for power semiconductor devices – Application to IGBTs. Microelectronics Reliability. 2025-01. https://doi.org/10.1016/j.microrel.2024.115565