High-Performance Proton Field-Effect Transistor Based on Two-Dimensional Cd Vacancy-Resided Cd 0.85 PS 3 Li 0.15 H 0.15
Wenhao Shi; Xitang Qian; Chuankai Zou; Meng Zhang; Chenhui Huang; Xiangshui Miao; Lei Ye
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Nano
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsnano.4c03649
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Cite this source
Wenhao Shi; Xitang Qian; Chuankai Zou; Meng Zhang; Chenhui Huang; Xiangshui Miao; Lei Ye. High-Performance Proton Field-Effect Transistor Based on Two-Dimensional Cd Vacancy-Resided Cd 0.85 PS 3 Li 0.15 H 0.15. ACS Nano. 2024-08-15. https://doi.org/10.1021/acsnano.4c03649