Fundamental understanding of quantum confinement effect on gate oxide reliability for gate-all around field-effect transistor
Xufan Li; Shijie Huang; Jiawei Wang; Lingfei Wang; Ling Li
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0229625
The original publisher provides the full text and its access options.
Cite this source
Xufan Li; Shijie Huang; Jiawei Wang; Lingfei Wang; Ling Li. Fundamental understanding of quantum confinement effect on gate oxide reliability for gate-all around field-effect transistor. Journal of Applied Physics. 2024-12-17. https://doi.org/10.1063/5.0229625