Bottom p-i-n Isolation Enabling GAA Nanosheet Transistor for Low-Power Applications
Chunlei Wu; Yumin Xu; Boqian Shen; Fei Zhao; Jian Ma; Hanzhi Gu; Yueyuan Yu; Min Xu; Qingqing Sun; David Wei Zhang
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3456774
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Cite this source
Chunlei Wu; Yumin Xu; Boqian Shen; Fei Zhao; Jian Ma; Hanzhi Gu; Yueyuan Yu; Min Xu; Qingqing Sun; David Wei Zhang. Bottom p-i-n Isolation Enabling GAA Nanosheet Transistor for Low-Power Applications. IEEE Transactions on Electron Devices. 2024-11. https://doi.org/10.1109/ted.2024.3456774