Highly-Stable and Lower-Power Static Random-Access Memory Design in Carbon Nanotube Field Effect Transistor Nanotechnology
- Published
- Publisher
- CSIR-National Institute of Science Communication and Policy Research (NIScPR)
- Journal / collection
- INDIAN JOURNAL OF PURE AND APPLIED PHYSICS
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.56042/ijpap.v63i12.21046
The original publisher provides the full text and its access options.
Cite this source
CSIR-National Institute of Science Communication and Policy Research (NIScPR). Highly-Stable and Lower-Power Static Random-Access Memory Design in Carbon Nanotube Field Effect Transistor Nanotechnology. INDIAN JOURNAL OF PURE AND APPLIED PHYSICS. 2025. https://doi.org/10.56042/ijpap.v63i12.21046