The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures
Wenting Xie; Xiaoting Chen; Liting Zhang; Xiangjun Lu; Bing Ding; An Xie
- Published
- Publisher
- MDPI AG
- Journal / collection
- Micromachines
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/mi16020221
The original publisher provides the full text and its access options.
Cite this source
Wenting Xie; Xiaoting Chen; Liting Zhang; Xiangjun Lu; Bing Ding; An Xie. The Effect of Through-Silicon-Via Thermal Stress on Metal-Oxide-Semiconductor Field-Effect Transistor Properties Under Cooling to Ultra-Low Temperatures. Micromachines. 2025-02-15. https://doi.org/10.3390/mi16020221