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A Read-out Scheme of 1T-1D DRAM Design with Transistor Assisted Decoupled Sensing Amplifier in 7 nm Technology

Yogesh Namdeorao Thakare; Utkarsha Anilrao Wankhade; Sujata Nishikant Kale

Published
Publisher
Informa UK Limited
Journal / collection
International Journal of Electronics
Research area
Semiconductors
Source type
Journal article
DOI
10.1080/00207217.2025.2450730

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Yogesh Namdeorao Thakare; Utkarsha Anilrao Wankhade; Sujata Nishikant Kale. A Read-out Scheme of 1T-1D DRAM Design with Transistor Assisted Decoupled Sensing Amplifier in 7 nm Technology. International Journal of Electronics. 2025-01-16. https://doi.org/10.1080/00207217.2025.2450730

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