Selective-Area Growth of Hexagonal-to-Cubic GaN as an n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Drain on a Nanogrooved Si(100) Substrate
CJ. Cheng-Jun Huang; Shuo Hwai; Tsai-Fu Chung; Chien-Nan Hsiao; Hsin-Yi Tsai; Jing-Cheng Lin; Yu-Jin Hung; Bo-Cheng Lin; Shih-Meng Chen; Hung-Ching Tsai; Jason Woo; Edward. Yi Chang; Mau-Chung Frank Chang
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- Crystal Growth & Design
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acs.cgd.4c00683
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CJ. Cheng-Jun Huang; Shuo Hwai; Tsai-Fu Chung; Chien-Nan Hsiao; Hsin-Yi Tsai; Jing-Cheng Lin; Yu-Jin Hung; Bo-Cheng Lin; Shih-Meng Chen; Hung-Ching Tsai; Jason Woo; Edward. Yi Chang; Mau-Chung Frank Chang. Selective-Area Growth of Hexagonal-to-Cubic GaN as an n-Type Metal–Oxide–Semiconductor Field-Effect Transistor Drain on a Nanogrooved Si(100) Substrate. Crystal Growth & Design. 2024-09-30. https://doi.org/10.1021/acs.cgd.4c00683