An Improved Electro-Thermal Model for GaN Gate Injection Transistor
Lucas Dolizy; Arnaud Videt; Ke Li
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE Design Methodologies Conference (DMC)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/dmc62632.2024.10812145
The original publisher provides the full text and its access options.
Cite this source
Lucas Dolizy; Arnaud Videt; Ke Li. An Improved Electro-Thermal Model for GaN Gate Injection Transistor. 2024 IEEE Design Methodologies Conference (DMC). 2024-11-18. https://doi.org/10.1109/dmc62632.2024.10812145