Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots
J. Brubach; T.-Y. Huang; T. Borrely; C. Greenhill; J. Walrath; G. Fedele; Y.-C. Yang; A. Zimmerman; R. S. Goldman
- Published
- Publisher
- AIP Publishing
- Journal / collection
- Applied Physics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1063/5.0244331
The original publisher provides the full text and its access options.
Cite this source
J. Brubach; T.-Y. Huang; T. Borrely; C. Greenhill; J. Walrath; G. Fedele; Y.-C. Yang; A. Zimmerman; R. S. Goldman. Dopant vs free carrier concentrations in InAs/GaAs semiconductor quantum dots. Applied Physics Letters. 2025-03-01. https://doi.org/10.1063/5.0244331