Damage effects in GaN high electron mobility transistor power amplifier induced by high power microwave pulses
Jingtao Zhao; Gang Zhao; Quanyou Chen; Zidong Chen; Lei Cao; Xixi Feng; Zhong Liu; Chaoyang Chen
- Published
- Publisher
- Springer Science and Business Media LLC
- Journal / collection
- Scientific Reports
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1038/s41598-025-89938-6
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Cite this source
Jingtao Zhao; Gang Zhao; Quanyou Chen; Zidong Chen; Lei Cao; Xixi Feng; Zhong Liu; Chaoyang Chen. Damage effects in GaN high electron mobility transistor power amplifier induced by high power microwave pulses. Scientific Reports. 2025-02-18. https://doi.org/10.1038/s41598-025-89938-6