Emulating Low-Power Synaptic Plasticity in a Solution-Processed Oxide-Based Long Retention Memory Transistor with High Learning Accuracy
Rajarshi Chakraborty; Subarna Pramanik; Nila Pal; Utkarsh Pandey; Swati Suman; Parasuraman Swaminathan; Bhola Nath Pal
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Materials & Interfaces
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsami.4c07345
The original publisher provides the full text and its access options.
Cite this source
Rajarshi Chakraborty; Subarna Pramanik; Nila Pal; Utkarsh Pandey; Swati Suman; Parasuraman Swaminathan; Bhola Nath Pal. Emulating Low-Power Synaptic Plasticity in a Solution-Processed Oxide-Based Long Retention Memory Transistor with High Learning Accuracy. ACS Applied Materials & Interfaces. 2024-09-02. https://doi.org/10.1021/acsami.4c07345