Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor
Ge Tang; Fuwang Zhang; Yao Xiao; Siji Zhu; Jingrui Liu; Mo Li
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Journal of Physics D: Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1361-6463/ad4eeb
The original publisher provides the full text and its access options.
Cite this source
Ge Tang; Fuwang Zhang; Yao Xiao; Siji Zhu; Jingrui Liu; Mo Li. Transient synergistic damage mechanism and characterization of silicon bipolar junction transistor. Journal of Physics D: Applied Physics. 2024-06-12. https://doi.org/10.1088/1361-6463/ad4eeb