High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer
Seung-Min Lee; Seong Cheol Jang; Ji-Min Park; Jaewon Park; Nayoung Choi; Kwun-Bum Chung; Jung Woo Lee; Hyun-Suk Kim
- Published
- Publisher
- MDPI AG
- Journal / collection
- Nanomaterials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/nano15060418
The original publisher provides the full text and its access options.
Cite this source
Seung-Min Lee; Seong Cheol Jang; Ji-Min Park; Jaewon Park; Nayoung Choi; Kwun-Bum Chung; Jung Woo Lee; Hyun-Suk Kim. High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer. Nanomaterials. 2025-03-08. https://doi.org/10.3390/nano15060418