One memristor–one electrolyte-gated transistor-based high energy-efficient dropout neuronal units
Yalin 亚霖 Li 李; Kailu 凯璐 Shi 时; Yixin 一新 Zhu 朱; Xiao 晓 Fang 方; Hangyuan 航源 Cui 崔; Qing 青 Wan 万; Changjin 昌锦 Wan 万
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Chinese Physics B
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1674-1056/ad39d6
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Cite this source
Yalin 亚霖 Li 李; Kailu 凯璐 Shi 时; Yixin 一新 Zhu 朱; Xiao 晓 Fang 方; Hangyuan 航源 Cui 崔; Qing 青 Wan 万; Changjin 昌锦 Wan 万. One memristor–one electrolyte-gated transistor-based high energy-efficient dropout neuronal units. Chinese Physics B. 2024-06-01. https://doi.org/10.1088/1674-1056/ad39d6