Monolayer WSe 2 Field-Effect Transistor Performance Enhancement by Atomic Defect Engineering and Passivation
Yuanqiu Tan; Shao-Heng Yang; Chih-Pin Lin; Fernando J. Vega; Jun Cai; Hao-Yu Lan; Rahul Tripathi; Sahej Sharma; Zhongxia Shang; Tuo-Hung Hou; Thomas E. Beechem; Joerg Appenzeller; Zhihong Chen
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Nano
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsnano.4c16831
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Cite this source
Yuanqiu Tan; Shao-Heng Yang; Chih-Pin Lin; Fernando J. Vega; Jun Cai; Hao-Yu Lan; Rahul Tripathi; Sahej Sharma; Zhongxia Shang; Tuo-Hung Hou; Thomas E. Beechem; Joerg Appenzeller; Zhihong Chen. Monolayer WSe 2 Field-Effect Transistor Performance Enhancement by Atomic Defect Engineering and Passivation. ACS Nano. 2025-02-27. https://doi.org/10.1021/acsnano.4c16831