Oxide-Semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 Architecture
Shosuke Fujii; Tseng Fu Lu; Keiji Ikeda; Szu Yao Chang; Kei Sakamoto; Lu Wei Chung; Mutsumi Okajima; Jhen-Yu Tsai; Toshifumi Kuroda; Chung Peng Hao; Shinji Miyano; Mei Chuan Peng; Kimitoshi Okano; Martin Sillero; Akihiro Kajita; Chung Lin Huang; Takeshi Fujimaki; Chiang-Lin Shih
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50854.2024.10873368
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Shosuke Fujii; Tseng Fu Lu; Keiji Ikeda; Szu Yao Chang; Kei Sakamoto; Lu Wei Chung; Mutsumi Okajima; Jhen-Yu Tsai; Toshifumi Kuroda; Chung Peng Hao; Shinji Miyano; Mei Chuan Peng; Kimitoshi Okano; Martin Sillero; Akihiro Kajita; Chung Lin Huang; Takeshi Fujimaki; Chiang-Lin Shih. Oxide-Semiconductor Channel Transistor DRAM (OCTRAM) with 4F2 Architecture. 2024 IEEE International Electron Devices Meeting (IEDM). 2024-12-07. https://doi.org/10.1109/iedm50854.2024.10873368