On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices
Mischa Thesberg; Tetiana Obukhova; Damien Deleruyelle; Jens Trommer; Thomas Mikolajick; Oskar Baumgartner; Franz Schanovsky; Zlatan Stanojević; Markus Karner
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2024.3459878
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Cite this source
Mischa Thesberg; Tetiana Obukhova; Damien Deleruyelle; Jens Trommer; Thomas Mikolajick; Oskar Baumgartner; Franz Schanovsky; Zlatan Stanojević; Markus Karner. On the Potential of Ambipolar Schottky-Based Ferroelectric Transistor Designs for Enhanced Memory Windows in Scaled Devices. IEEE Transactions on Electron Devices. 2024-11. https://doi.org/10.1109/ted.2024.3459878