Optimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate
Bonghwan Kim; Seung-Hwan Park
- Published
- Publisher
- MDPI AG
- Journal / collection
- Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.3390/ma17225515
The original publisher provides the full text and its access options.
Cite this source
Bonghwan Kim; Seung-Hwan Park. Optimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate. Materials. 2024-11-12. https://doi.org/10.3390/ma17225515