Effects of high-dose gamma-ray irradiation on an In 0.53 Ga 0.47 As high electron mobility transistor
Jae-Phil Shim; Dong-Seok Kim; Hyunchul Jang; Ju-Won Shin; Deok-Soo Park; Donghyun Kim; Chan-Soo Shin; Seung Heon Shin
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Japanese Journal of Applied Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.35848/1347-4065/ad1e89
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Cite this source
Jae-Phil Shim; Dong-Seok Kim; Hyunchul Jang; Ju-Won Shin; Deok-Soo Park; Donghyun Kim; Chan-Soo Shin; Seung Heon Shin. Effects of high-dose gamma-ray irradiation on an In 0.53 Ga 0.47 As high electron mobility transistor. Japanese Journal of Applied Physics. 2024-02-05. https://doi.org/10.35848/1347-4065/ad1e89