Enhancement-Mode Atomic Layer Deposited W-Doped In 2 O 3 Transistor at 55 nm Channel Length by Oxide Capping Layer with Improved Stability
Qing Lin; Nathaniel Safron; Donglai Zhong; Goutham Arutchelvan; Carlo Gilardi; Chanyoung Yoo; Jonathan Hartanto; Balreen Saini; Sheng-Chih Lai; Gregory Pitner; Gary Chen; Marvin M.F. Chang; Yu-Ming Lin; Wilman Tsai; Paul C. McIntyre; Iuliana P. Radu
- Published
- Publisher
- IEEE
- Journal / collection
- 2024 IEEE International Electron Devices Meeting (IEDM)
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1109/iedm50854.2024.10873594
The original publisher provides the full text and its access options.
Cite this source
Qing Lin; Nathaniel Safron; Donglai Zhong; Goutham Arutchelvan; Carlo Gilardi; Chanyoung Yoo; Jonathan Hartanto; Balreen Saini; Sheng-Chih Lai; Gregory Pitner; Gary Chen; Marvin M.F. Chang; Yu-Ming Lin; Wilman Tsai; Paul C. McIntyre; Iuliana P. Radu. Enhancement-Mode Atomic Layer Deposited W-Doped In 2 O 3 Transistor at 55 nm Channel Length by Oxide Capping Layer with Improved Stability. 2024 IEEE International Electron Devices Meeting (IEDM). 2024-12-07. https://doi.org/10.1109/iedm50854.2024.10873594