GaN complementary transistor technology for RF and power applications
Tomas Palacios
- Published
- Publisher
- SPIE
- Journal / collection
- Gallium Nitride Materials and Devices XIX
- Research area
- Semiconductors
- Source type
- Conference paper
- DOI
- 10.1117/12.3006229
The original publisher provides the full text and its access options.
Cite this source
Tomas Palacios. GaN complementary transistor technology for RF and power applications. Gallium Nitride Materials and Devices XIX. 2024-03-09. https://doi.org/10.1117/12.3006229