Study of MoN gate impact on GaN high electron mobility transistor
Lixing Zhang; BeiBei Lv; Xu Ding; Faxin Yu; Jiongjiong Mo
- Published
- Publisher
- Institution of Engineering and Technology (IET)
- Journal / collection
- Electronics Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1049/ell2.13236
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Cite this source
Lixing Zhang; BeiBei Lv; Xu Ding; Faxin Yu; Jiongjiong Mo. Study of MoN gate impact on GaN high electron mobility transistor. Electronics Letters. 2024-05. https://doi.org/10.1049/ell2.13236