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Research literature / Conference paper

Analysis of the non-monotonic dependence of FOM of β-Ga 2 O 3 based Junctionless Field Effect Transistor on doping profile linearity in the drift region

V R Manukrishna; K S Nikhil

Published
Publisher
IEEE
Journal / collection
2024 7th International Conference on Devices, Circuits and Systems (ICDCS)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/icdcs59278.2024.10560488

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V R Manukrishna; K S Nikhil. Analysis of the non-monotonic dependence of FOM of β-Ga 2 O 3 based Junctionless Field Effect Transistor on doping profile linearity in the drift region. 2024 7th International Conference on Devices, Circuits and Systems (ICDCS). 2024-04-23. https://doi.org/10.1109/icdcs59278.2024.10560488

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