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Research literature / Journal article

Nonvolatile ferroelectric resistive switching in α-In2Se3(2H) ferroelectric semiconductor junctions

Baohua Lv; Yuzhen Li

Published
Publisher
Elsevier BV
Journal / collection
Vacuum
Research area
Semiconductors
Source type
Journal article
DOI
10.1016/j.vacuum.2024.113275

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Baohua Lv; Yuzhen Li. Nonvolatile ferroelectric resistive switching in α-In2Se3(2H) ferroelectric semiconductor junctions. Vacuum. 2024-07. https://doi.org/10.1016/j.vacuum.2024.113275

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