A suspended InSe membrane-based metal-semiconductor junction with excellent performance via flexoelectricity
J.J. Wu; Z.Z. He; G.Q. Zuo; L. Sun; D. Tan; C.L. Zhang
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Materials Today Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.mtphys.2025.101701
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Cite this source
J.J. Wu; Z.Z. He; G.Q. Zuo; L. Sun; D. Tan; C.L. Zhang. A suspended InSe membrane-based metal-semiconductor junction with excellent performance via flexoelectricity. Materials Today Physics. 2025-04. https://doi.org/10.1016/j.mtphys.2025.101701