A Phenomenological Mathematical Model on I – V Curve of p-n Junctions in Semiconductor Diodes
Liang Zhao; Shuai Shao; Yunshuo Zhang; Jianhui Bu
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Transactions on Electron Devices
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/ted.2026.3726916
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Cite this source
Liang Zhao; Shuai Shao; Yunshuo Zhang; Jianhui Bu. A Phenomenological Mathematical Model on I – V Curve of p-n Junctions in Semiconductor Diodes. IEEE Transactions on Electron Devices. 2026-10. https://doi.org/10.1109/ted.2026.3726916