Effect of Strain on Electron Transport and Quantum Lifetimes in In x Ga 1− x As/In 0.52 Al 0.48 As Modulation Doped Double Quantum Well‐Based High Electron Mobility Transistor Structures
Ram Chandra Swain; Ajit Kumar Sahu; Madhusudan Mishra; Trinath Sahu; Narayan Sahoo
- Published
- Publisher
- Wiley
- Journal / collection
- physica status solidi (b)
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1002/pssb.202300501
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Cite this source
Ram Chandra Swain; Ajit Kumar Sahu; Madhusudan Mishra; Trinath Sahu; Narayan Sahoo. Effect of Strain on Electron Transport and Quantum Lifetimes in In x Ga 1− x As/In 0.52 Al 0.48 As Modulation Doped Double Quantum Well‐Based High Electron Mobility Transistor Structures. physica status solidi (b). 2024-03-03. https://doi.org/10.1002/pssb.202300501