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Research literature / Journal article

An Al-Drain Silicon Transistor With Ultra-Steep Subthreshold Slope and Low Operating Voltage

Zhibo Chen; Weiao Chen; Baowei Yuan; Yingxin Chen; Chengjie Tang; Weizhuo Gan; Chunsong Zhao; Zhaozhao Hou; Qiang Zhang; Jiachen Gao; Jiale Wang; Jeffrey Xu; Shisheng Xiong; Jing Wan; Ye Lu

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Electron Device Letters
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/led.2025.3531560

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Zhibo Chen; Weiao Chen; Baowei Yuan; Yingxin Chen; Chengjie Tang; Weizhuo Gan; Chunsong Zhao; Zhaozhao Hou; Qiang Zhang; Jiachen Gao; Jiale Wang; Jeffrey Xu; Shisheng Xiong; Jing Wan; Ye Lu. An Al-Drain Silicon Transistor With Ultra-Steep Subthreshold Slope and Low Operating Voltage. IEEE Electron Device Letters. 2025-03. https://doi.org/10.1109/led.2025.3531560

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