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Research literature / Conference paper

Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel

Quyen Tran; John Hayden; Joseph Casamento; Jon-Paul Maria; Thomas N. Jackson

Published
Publisher
IEEE
Journal / collection
2024 Device Research Conference (DRC)
Research area
Semiconductors
Source type
Conference paper
DOI
10.1109/drc61706.2024.10605410

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Quyen Tran; John Hayden; Joseph Casamento; Jon-Paul Maria; Thomas N. Jackson. Boron-Doped Aluminum Nitride Ferroelectric Field-Effect Transistors with ZnO Semiconductor Channel. 2024 Device Research Conference (DRC). 2024-06-24. https://doi.org/10.1109/drc61706.2024.10605410

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