InP Crystal Phase Heterojunction Transistor with a Vertical Gate-All-Around Structure
Yu Katsumi; Hironori Gamo; Junichi Motohisa; Katsuhiro Tomioka
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Materials & Interfaces
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsami.4c00147
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Cite this source
Yu Katsumi; Hironori Gamo; Junichi Motohisa; Katsuhiro Tomioka. InP Crystal Phase Heterojunction Transistor with a Vertical Gate-All-Around Structure. ACS Applied Materials & Interfaces. 2024-05-31. https://doi.org/10.1021/acsami.4c00147