Design and performance analysis of double gate vertically stacked MoS 2 nanosheet field effect transistor
Srikanth Rudravaram; Rajendra P Shukla; Maheshwaram Satish
- Published
- Publisher
- IOP Publishing
- Journal / collection
- Physica Scripta
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1088/1402-4896/ad6040
The original publisher provides the full text and its access options.
Cite this source
Srikanth Rudravaram; Rajendra P Shukla; Maheshwaram Satish. Design and performance analysis of double gate vertically stacked MoS 2 nanosheet field effect transistor. Physica Scripta. 2024-07-18. https://doi.org/10.1088/1402-4896/ad6040