Gate-Modulated Temperature-Dependent NO 2 Gas Responsivity of h-BN Bottom-Gated MoS 2 Field-Effect Transistor
Doyoon Kim; Dong Hyeon Kim; Hyeran Cho; Yeonsu Kim; Chan Sol Mun; Gyu-Tae Kim
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.4c01901
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Cite this source
Doyoon Kim; Dong Hyeon Kim; Hyeran Cho; Yeonsu Kim; Chan Sol Mun; Gyu-Tae Kim. Gate-Modulated Temperature-Dependent NO 2 Gas Responsivity of h-BN Bottom-Gated MoS 2 Field-Effect Transistor. ACS Applied Electronic Materials. 2024-12-30. https://doi.org/10.1021/acsaelm.4c01901