A Simulation Study on the Performance of Double Gate Junctionless Field Effect Transistor for Doping Concentration Variation
Central Institute of Technology Kokrajhar, Department of Instrumentation Engineering, 783370, India; P. Saikia; A. K. Raibaruah; Central Institute of Technology Kokrajhar, Department of Instrumentation Engineering, 783370, India; K. C. D. Sarma; Central Institute of Technology Kokrajhar, Department of Instrumentation Engineering, 783370, India
- Published
- Publisher
- Sumy State University
- Journal / collection
- Journal of Nano- and Electronic Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.21272/jnep.16(5).05016
The original publisher provides the full text and its access options.
Cite this source
Central Institute of Technology Kokrajhar, Department of Instrumentation Engineering, 783370, India; P. Saikia; A. K. Raibaruah; Central Institute of Technology Kokrajhar, Department of Instrumentation Engineering, 783370, India; K. C. D. Sarma; Central Institute of Technology Kokrajhar, Department of Instrumentation Engineering, 783370, India. A Simulation Study on the Performance of Double Gate Junctionless Field Effect Transistor for Doping Concentration Variation. Journal of Nano- and Electronic Physics. 2024. https://doi.org/10.21272/jnep.16(5).05016