On the Scalability of Nanosheet Oxide Semiconductor FETs
Masaharu Kobayashi; Kaito Hikake; Xingyu Huang; Sunghun Kim; Kota Sakai; Zhuo Li; Tomoko Mizutani; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka
- Published
- Publisher
- International Display Workshops General Incorporated Association
- Journal / collection
- Proceedings of the International Display Workshops
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.36463/idw.2024.0176
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Cite this source
Masaharu Kobayashi; Kaito Hikake; Xingyu Huang; Sunghun Kim; Kota Sakai; Zhuo Li; Tomoko Mizutani; Takuya Saraya; Toshiro Hiramoto; Takanori Takahashi; Mutsunori Uenuma; Yukiharu Uraoka. On the Scalability of Nanosheet Oxide Semiconductor FETs. Proceedings of the International Display Workshops. 2024-12-05. https://doi.org/10.36463/idw.2024.0176