Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz
Emre Akso; Weiyi Li; Christopher Clymore; Everett O’Malley; Matthew Guidry; Justin Kim; Brian Romanczyk; Henry Collins; Boyu Wang; Christian Wurm; Nirupam Hatui; Stacia Keller; James F. Buckwalter; Umesh K. Mishra
- Published
- Publisher
- Institute of Electrical and Electronics Engineers (IEEE)
- Journal / collection
- IEEE Microwave and Wireless Technology Letters
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1109/lmwt.2024.3365145
The original publisher provides the full text and its access options.
Cite this source
Emre Akso; Weiyi Li; Christopher Clymore; Everett O’Malley; Matthew Guidry; Justin Kim; Brian Romanczyk; Henry Collins; Boyu Wang; Christian Wurm; Nirupam Hatui; Stacia Keller; James F. Buckwalter; Umesh K. Mishra. Record D-Band Performance From Prematched N-Polar GaN-on-Sapphire Transistor With 2 W/mm and 10.6% PAE at 132 GHz. IEEE Microwave and Wireless Technology Letters. 2024-04. https://doi.org/10.1109/lmwt.2024.3365145