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One-Transistor Ternary Content-Addressable Memory Based on Localized Ferroelectric Switching for Massive and Accurate Routing

Minjeong Ryu; Jae Seung Woo; Chae Lin Jung; Woo Young Choi

Published
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Journal / collection
IEEE Electron Device Letters
Research area
Semiconductors
Source type
Journal article
DOI
10.1109/led.2023.3345412

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Minjeong Ryu; Jae Seung Woo; Chae Lin Jung; Woo Young Choi. One-Transistor Ternary Content-Addressable Memory Based on Localized Ferroelectric Switching for Massive and Accurate Routing. IEEE Electron Device Letters. 2024-02. https://doi.org/10.1109/led.2023.3345412

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