Design of spin field-effect transistor based on Rashba and ferroelectric cofunctionality of In2Te3
Pan Gao; Tongwei Li; Qingxiao Zhou; Xinxin Wang; Yanan Tang; Weiwei Ju
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Chinese Journal of Physics
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.cjph.2026.05.016
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Cite this source
Pan Gao; Tongwei Li; Qingxiao Zhou; Xinxin Wang; Yanan Tang; Weiwei Ju. Design of spin field-effect transistor based on Rashba and ferroelectric cofunctionality of In2Te3. Chinese Journal of Physics. 2026-10. https://doi.org/10.1016/j.cjph.2026.05.016