A nanotwin-based physical model for designing robust layered bismuth telluride thermoelectric semiconductor
Xiege Huang; Xiong Zhou; Luoqi Wu; Xiaobin Feng; Pengcheng Zhai; Bo Duan; Guodong Li; Qingjie Zhang; William A. Goddard
- Published
- Publisher
- Elsevier BV
- Journal / collection
- Cell Reports Physical Science
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1016/j.xcrp.2024.101841
The original publisher provides the full text and its access options.
Cite this source
Xiege Huang; Xiong Zhou; Luoqi Wu; Xiaobin Feng; Pengcheng Zhai; Bo Duan; Guodong Li; Qingjie Zhang; William A. Goddard. A nanotwin-based physical model for designing robust layered bismuth telluride thermoelectric semiconductor. Cell Reports Physical Science. 2024-03. https://doi.org/10.1016/j.xcrp.2024.101841