A Monolithically Integrated GaN-Based Light Emitting Transistor with a High On/Off Ratio and Low Gate Leakage Current
Jae Hun Kim; Ilgu Yun
- Published
- Publisher
- American Chemical Society (ACS)
- Journal / collection
- ACS Applied Electronic Materials
- Research area
- Semiconductors
- Source type
- Journal article
- DOI
- 10.1021/acsaelm.4c01239
The original publisher provides the full text and its access options.
Cite this source
Jae Hun Kim; Ilgu Yun. A Monolithically Integrated GaN-Based Light Emitting Transistor with a High On/Off Ratio and Low Gate Leakage Current. ACS Applied Electronic Materials. 2024-11-01. https://doi.org/10.1021/acsaelm.4c01239